当前位置：产品网商铺 > 公司新闻
关于温补晶振的最新技术指标
作者：2011/12/31 5:02:15

 

关于温补晶振的最新技术指标

TCXO     TemperatureCompensatedCrystalOscillators  温补晶振

TCVCXO TemperatureCompensatedVoltageControlledOscillators  温补压控晶振

温补晶振

资料下载地址：   

 

TCXO    TemperatureCompensatedCrystalOscillators  温补晶振

TCVCXO TemperatureCompensatedVoltageControlled Oscillators  温补压控晶振

 

一、应用                  

通讯、航空、航天、军事、移动通信、数字程控交换机、网络传输、接入网、光传输、
雷达、导航、电子对抗、无线通信、测试设备、锁相环电路SDH、SONET、ATM、WLL、
PCS基站、蜂窝基站、频率合成器

 

二、主要技术指标

1)FrequencyRange频率范围:1.00-200.00MHz

2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,

14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz,

18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,

20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,

32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz

2)InitialCalibration频率准确度:A ≤±1.0ppm@25℃   B ≤±0.5ppm @25℃

3)FrequencyAdjustment频率调整:  1Ageingadjustment:≥±5ppm 

                                 2 Nofrequency adjustment

4)OperatingTemperature工作温度范围:C  -20-+70℃  D  -40-+85℃  E  -55-+105℃

5)FrequencyStability温度频率稳定度:F ±0.28ppm G  ±0.5ppm  H  ±1.0ppm

                                    I  ±1.5ppm   J  ±2.0ppm   K ±2.5ppm

6)OutputWaveform输出波形: 1Sine 正弦波 2Hcmos 方波3 ClippedSine削峰正弦波

7)SupplyVoltage工作电压范围: L3.3V±10% M5.0V±10%

8)Ageing 频率老化率: ±1ppmmaximuminfirstyear,±3ppmmaximumfor10years

 

9)PhaseNoise相位噪声:

 

 

Frequency

10Hz

100Hz

1kHz

10kHz

100kHz

13.0MHz

–95 dBc/Hz

–120dBc/Hz

–135dBc/Hz

–140dBc/Hz

–145dBc/Hz



 

 

 

 

 

 

10)PackageOutline封装、尺寸:

N DIP 21*13*5mm   O DIP 18*12*5mm  P DIP 20*20*10mm      Q DIP 36*27*16mm

R SMD 5*3*1mm     S SMD 7*5*2mm    T SMD 9*7*3mm         U SMD 14*9*6mm
 

关于温补晶振的最新技术指标
 

11)StorageTemperature储存温度范围： -55-+125℃

 

三、产品定型 RTT-10MHZ-B 2 D G 1 M S

 

 

 

频率

准确度

频率调整

温度范围

稳定性

波形

电压

尺寸

RTT

10

B

2

D

G

1

M

S

 

RTT

 

10MHZ

±0.5ppm

@25℃

Nofrequencyadjustment

-40-+85

℃

±0.5ppm

 

Sine

 

5.0V

SMD

7*5*2mm



封装

尺寸

电压

频率

MHz

稳定性

工作温度

输出波形

TCXOsSMD

11x9mm

3.0V

9.6to40

MHz

±2.5ppm  ±5ppm

-30to75°C

ClippedSine

TCXOsSMD

7x5mm

3.0V

10to26

MHz

±1.5ppm±2ppm±2.5ppm

-40to85°C

ClippedSine

TCXOsSMD

7x5mm

3.3V

10to40

MHz

±0.9ppm

-20to70°C

HCMOS

TCXOsSMD

5x3mm

3.0V

16to33.6

MHz

±0.5ppm

-40to85°C

ClippedSine

TCXOsSMD

5x3mm

3.0V

10to30

MHz

±1.5ppm±2ppm±2.5ppm

-40to85°C

ClippedSine

TCXOsSMD

7x5mm

3.3V

10to40

MHz

±0.9ppm

-20to70°C

HCMOS

TCXOsSMD

7x5mm

3.3V

10to40

MHz

±0.5ppm

-40to85°C

HCMOS

TCXOsSMD

7x5mm

5.0V

1.25to40

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40to85°C

SquareHCOMS

TCXOsSMD

7x5mm

5.0V

10to40

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40to85°C

SquareHCOMS

TCXOsSMD

7x5mm

5.0V

10to40

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40to85°C

SquareHCOMS

TCXOsSMD

7x5mm

3.3V

1.25to40

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40to85°C

SquareHCOMS

TCXOsSMD

7x5mm

3.3V

10to40

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40to85°C

SquareHCOMS

TCXOsSMD

7x5mm

3.3V

10to40

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-40to85°C

ClippedSine

TCXOsSMD

14.1x9.1mm

5.0V

1to50

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

SquareHCOMS

TCXOsSMD

14.1x9.1mm

5.0V

8to50

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

Sine

TCXOsSMD

14.1x9.1mm

5.0V

1to80

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

SquareACMOS

TCXOsSMD

14.1x9.1mm

5.0V

8to50

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

ClippedSine

TCXOsSMD

14.1x9.1mm

3.3V

1to50

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

SquareHCOMS

TCXOsSMD

14.1x9.1mm

3.3V

8to50

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

Sine

TCXOsSMD

14.1x9.1mm

3.3V

1to80

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

SquareACMOS

TCXOsSMD

14.1x9.1mm

3.3V

8to50

MHz

±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm

-55to105°C

ClippedSine

TCXOsSMD

5x3mm

3.3V

1to52

MHz

±0.2ppm±0.3ppm

±0.5ppm±1ppm±2ppm

-40to85°C

SquareHCOMS

TCXOsSMD

5x3mm

3.0V

12to52

MHz

±0.2ppm±0.3ppm
±0.5ppm ±1ppm ±2ppm

-40to85°C

ClippedSine



 

VC-TCXO      TCXO

Size(mm)

SMD 5.0X3.2X1.05 mm

Output Frequency Range

10MHz - 40 MHz

Supply Voltage (Vdd)

 +3.3V

Current Consumption

+1.2mA ≤15MHz  +1.4mA15-26MHz  +1.6mA>26MHz

Output Level

0.8Vp-p min. Clipped sinewave/ DC-coupled 10kΩ // 10pF

Freq Stability Tolerance

≤±1.5ppm    (with frequency adjustment)

Vs. Temperature

H: ≤±1.0ppm D:-40-+85°C G:≤±0.5ppm  D:-40-+85°C

Vs. Supply Voltage

≤±0.2ppm

Vs. Load Variation

≤±0.2ppm

Vs.Aging

≤±1.0ppm/year

Frequency Control

±3.0ppm-±5.0ppm/+1.5+-1V

Phase Noise

≤15MHz             15-26MHz            >26MHz

-115dBc/Hz@100Hz  -110dBc/Hz@100Hz  -105dBc/Hz@100hz

-135dBc/Hz@1KHz   -130dBc/Hz@1KHz   -125dBc/Hz@1Khz

-145dBc/Hz@10KHz  -140dBc/Hz@10KHz  -135dBc/Hz@10Khz

-145dBc/Hz@100KHz  -145dBc/Hz@100KHz  -145dBc/Hz@100Khz

 



 

 

 

 

 

 























                      VC-TCXO       TCXO

Size(mm):  DIP25.0X15.0X10.0mm  DIP21.0X13.0X7.0mm

Output Frequency Range:1MHz-200MHz           1MHz-30MHz

Supply Voltage(Vdd): +3.3VDC  +5VDC  +12VDC

Current Consumption: +10mA

OutputLevel:Sinewave HCMOS  TTL   ClippedSinewave

Freq Stability Calibration:≤±0.5ppm   (withfrequencyadjustment)

Vs. Temperature:≤±0.2ppm ≤±0.3ppm ≤±0.4ppm ≤±0.5ppm ≤±1.0ppm
              -10-+60°C  -20-+70°C  -30-+70°C  -40-+85°C

Vs. Supply Voltage: ≤±0.1ppm
Vs. Load Variation: ≤±0.1ppm
Vs.Aging: ≤±1.0ppm/year
Frequency Control: ±3.0ppm/0-5V
PhaseNoise:10MHz           -130dBc/Hz@1KHz 


 

 

参数名称

技术指标

外形尺寸

DIP13*13*6mm 18.3*11.7*9mm 21*13*7mm

输出

频率(f0)

1-200MHz

正弦波

输出幅度

+7dBmMin.

杂散

-70dBcMax.

谐波

-30dBcMax.

负载(Load)

50Ω

方波

电平

HCMOS  

占空比

45～55%

上升/下降时间

4nSMax.

负载(Load)

4TTL

 

温度特性(df/f0)

±1ppmMax.   -20～70℃

±2ppmMax.   -40～85℃

日老化率(df/f0)

±0.01ppmMax.

频率稳定度

年老化率(df/f0)

±1ppmMax.

电压特性(df/f0)

±0.1ppmMax.Vs±5%

负载特性(df/f0)

±0.1ppmMax.Load±10%

短稳(df/f0)

0.5ppbMax.

相位

噪声

@10Hz

-90dBc/HzMax.

@100Hz

-110dBc/HzMax.

@1kHz

-135dBc/HzMax.

@10kHz

-140dBc/HzMax.

微调

电压

微调

牵引范围(df/f0)

±5ppmMin.

控制电压范围

1.5±1.0VDC/2.5±2.5VDC

线性度

±10%Max.

输入阻抗

20kΩMin.

功耗

工作电压(Vs)

+3.3VDC   +5VDC

工作电流

8mA



 

 

 

 

 

 

2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,8.192MHz,
9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,

14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz,

18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,

20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,

32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz

 

温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃,5.0V,sine输出,不带频率调整,封装SMD7×5×2mm

温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 10MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 10MHz ±1.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 10MHz ±2.0ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 10MHz ±2.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 10MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 10MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 10MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 10MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

温补晶振TCXO 10MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

温补晶振TCXO 10MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

 

温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,不带频率调整,封装SMD7×5×2mm

温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 20MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 20MHz ±1.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 20MHz ±2.0ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 20MHz ±2.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO20MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 20MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 20MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 20MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

温补晶振TCXO 20MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

温补晶振TCXO 20MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

 

温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,不带频率调整,封装SMD7×5×2mm

温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 40MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm

温补晶振TCXO 40MHz ±1.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 40MHz ±2.0ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 40MHz ±2.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm

温补晶振TCXO 40MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 40MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 40MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm

温补晶振TCXO 40MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

温补晶振TCXO 40MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm

温补晶振TCXO 40MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD 7×5mm
 

 

Ractron,Citizen,C-mac,NDK,Rakon,Raltron,TDK,Vectron

 

详细产品资料和技术规格可以来电来函咨询!

欢迎来电或传真、邮件提供邮递地址和邮编以便我们邮寄详细产品选型手册给您！

分享到 QQ空间新浪微博腾讯微博0

商户名称：深圳市瑞科创电子有限公司

版权所有©2025 产品网