穿芯电容
作者:2013/6/25 13:55:14

穿芯电容

一、 标称容量Capacitance :

10pF,65pF,100pF,470pF,500pF,1000pF,1200pF,1500pF,1750pF,2000pF,2500pF,2700pF,

3000pF,3300pF,4700pF,5000pF,5500pF,6800pF,7000pF,9000pF,10000pF,0.01μF,0.012μF,
0.015μF,0.018μF,0.022μF,0.025μF,0.027μF,0.028μF,0.045μF,0.050μF,

0.056μF,0.075μF,0.08μF,0.1μF,0.15μF,0.21μF,0.3μF,0.75μF,0.8μF,1μF,

0.015μF,0.060μF,0.062μF,0.150μF,0.200μF,0.250μF,0.250μF,0.300μF,0.450μF,0.500μF,
0.7μF,0.750μF,0.990μF,1.0μF,1.2μF,1.4μF,1.5μF,2.1μF,2.8μF,

4.0μF,5.2μF

101100pF 331330pF 471 470pF
102 1000pF 3323300pF 4724700pF
103 10000pF 33333000pF 47347000pF



1000pF=1nF 1000000pF=1μF 1000nF=1μF 1μF=1000nF=1000000pF 1F=1000000μF




Code
Capacitancetolerance
Code
Capacitancetolerance

F
&plu***n; 1pF
S
+ 50%, –20%

K
&plu***n;10%
Z
+ 80%, –20%

M
&plu***n;20%
P
+100%, – 0%











二、工作电流Rated Current :

0.06A,0.15A,0.25A,0.3A,0.45A,0.5A,1A,2A,3A,4A,5A,10A,15A,25A,50A,100A



三、额定电压Rated Voltage :

直流:5V,28V,35V,50V,60V,70V,80V,100V,150V,200V,250V,275V

300V,330V,350V,400V,450V,500V,600V,750V,1250V,2500V

交流:70V,85V,90V,115V,125V,140V,200V,220V,230V,240V,330V,350V



四、耐电压DielectricWithstandingVoltage :

直流:额定电压的2.5倍 交流:额定电压的6倍的直流电压



五、工作温度WorkingTemperatureRange:

E:-10-+85℃ F:-25-+85℃ G:-30-+125℃

H:-40-+85℃ I:-55-+85℃ J:-55-+125℃




温度特征
电容变化
温度范围

SL
SL(0&plu***n;30ppm/°C)
–25~+ 85°C

B
B(+10~ –10%)

D
D(+20~ –30%)

E
E(+20~ –55%)

F
F(+30~ –80%)

C
CG(+350~ –1000ppm/°C)
–55~+125°C

R
R(+15~ –15%)











六、EMI滤波器的构成
滤波电容
  滤波器所用的电容一般为陶瓷电容。由于其物理结构,这种陶瓷电容又称为穿心式电容。
  穿心式电容自电感较普通电容小得多,故而自谐振频率很高。同时,穿心式设计,也有效
地防止了高频信号从输入端直接耦合到输出端。这种低通高阻的组合,在1GHz 频率范围内,
提供了***的***效果。
  ***简单的穿心结构是由内外电极和陶瓷构成的一个(C 型)或两个电容(Pi 型)。
这种电容的容量可从10pF,工作电压可达2000VDC。管式穿心电容因为其同轴性,即使在
10GHz 频率,也不会产生明显的自谐振。
  穿心电容的介质为陶瓷介质,而陶瓷电容的容量会随环境温度变化而变化,这种容量变化
会影响滤波器的滤波截止率。陶瓷电容的容量温度变化率是由陶瓷介质本身决定的。因此,
选择适当的陶瓷介质非常重要。常见陶瓷介质及其容量温度变化率如下:




*** 介质类别
COG(NP0)
X7R
Z5U
Y5V

超稳定
稳定
一般用途

工作温度范围
-55℃~+125℃
-55 ℃~+125 ℃
-10℃~+85 ℃
-30℃~+85℃

***大容量温度变化率
0&plu***n;30ppm/℃
&plu***n; 15 %
-22% ~+56 %
-22%~+82%

绝缘电阻Ri
≥104mΩ
Cr ≤ 25nF Ri ≤ 4000MΩ
Cr ≤ 25nF Ri* ≤ 100S

损耗(tanб)
Cr>50pF≤0.015
Cr≤50pF≤0.015
(15/Cr+0.7)
<0.025
<0.030
0.050

介质强度
工作电压

200V

500V

>1KV
施加工作电压的倍数(加压时间5 秒,充电电流50max )

X2.5
X2.5
X2.5
X2.5

X1.5
X1.5
X1.5


X1.5
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