氮化硅窗口SiliconNitrideWindowGrids氮化硅TEM窗口在恶劣的实验室条件下表现良好，硅材料的框架100µm厚，适合标准的3mm支架和大多数双倾斜样品台，氮化硅窗口装在透明的凝胶盒中。等离子可清洗-可以耐受强力等离子清洗，移去有机污染层场到场的均匀性-整个薄膜厚度的变化小于0.5nm可容忍1000°C以上的温度-支持在高温下观察动态过程中使用经得起严酷的条件-提供理想的成像分辨率，化学稳定性和机械强度氮化硅采用LPCVD法制造，具有平坦，绝缘和疏水表面HighResolutionImaging:5nm76042-43,1square(25x25µm)76042-44,9squares(50x50µm)76042-45,2slots(50x1500µm)*Robust,IncreasedHighResolution:10nm76042-46,9squares(100x100µm)EverydayImaging:20nm76042-49,1square(500x500µm)76042-50,9squares(100x100µm)DemandingConditi***:50nm76042-53,1square(100x100µm)76042-52,1square(500x500µm)76042-51,1square(1000x1000µm)76042-50,9squares(100x100µm)Materials&Cryo-EMSuspension:Microporous76042-41,1square(500x500µm)76042-40,1square(500x500µm)*Coatedwith1nmofultrahighpuritycarbontominimizecharging产品选购：货号产品描述窗口尺寸厚度规格76042-40SiliconNitrideMicroporousTEMWindowGrid(2.0µmporeswithlabeledgrid)500µmsq.20nm10/pk76042-41SiliconNitrideMicroporousTEMWindowGrid(2.0µmporeswithlabeledgrid)500µmsq.50nm10/pk76042-42SiliconNitrideNanoporousTEMWindowGrid500µmsq.20nm10/pk76042-43SiliconNitrideTEMWindowGrid25µmsq.5nm10/pk76042-44SiliconNitrideTEMWindowGrid(8)50µmsq.,(1)50x100µm5nm10/pk76042-45SiliconNitrideTEMWindowGrid(2)50x1500µm5nm10/pk76042-46SiliconNitrideTEMWindowGrid(8)100sq.,(1)100x350µm10nm10/pk76042-47SiliconNitrideTEMWindowGrid(8)250sq.,(1)250x500µm10nm10/pk76042-48SiliconNitrideTEMWindowGrid(8)100sq.,(1)100x350µm20nm10/pk76042-49SiliconNitrideTEMWindowGrid500µmsq.20nm10/pk76042-50SiliconNitrideTEMWindowGrid(9)100µmsq.50nm10/pk76042-51SiliconNitrideTEMWindowGrid1000µmsq.50nm10/pk76042-52SiliconNitrideTEMWindowGrid500µmsq.50nm10/pk76042-53SiliconNitrideTEMWindowGrid100µmsq.50nm10/pk)