DG2N60是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面工艺及***的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产品能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。DG2N60isanN-channelenhancementmodeMOSFET,whichisproducedusingDongguangMicro-electronics’sproprietary.Theself-alignedplanarprocessandimprovedterminaltechnologyreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforhigherefficiencyandsystemminiaturization.)