三星显存K4M51323PE-HG75全新原装4Mx32Bitx4BanksMobileSDRAMin90FBG***FEATURES1.8Vpowersupply.LVCMOScompatiblewithmultiplexedaddress.Fourbanksoperation.MRScyclewithaddresskeyprograms.-.CASlatency(1,2&3).-.Burstlength(1,2,4,8&Fullpage).-.Bursttype(Sequential&Interle***e).•EMRScyclewithaddresskeyprograms.•Allinputsaresampledatthepositivegoingedgeofthesystemclock.•Burstreadsingle-bitwriteoperation.•SpecialFunctionSupport.-.PASR(PartialArraySelfRefresh).-.InternalTCSR(TemperatureCompensatedSelfRefresh)-.DS(DriverStrength)-.DPD(DeepPowerDown)•DQMformasking.•Autorefresh.•64msrefreshperiod(8Kcycle).•ExtendedTemperatureOperation(-25°C~85°C).•CommercialTemperatureOperation(-25°C~70°C).•90BallsFBGA(-SXXX-Pb,-DXXX-PbFreeGENERALDESCRIPTIONTheK4M51323PCis536,870,912bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wo***by32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnol-ogy.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransacti***arepossibleoneveryclockcycle.Rangeofoperatingfrequencies,programmableburstlengthsandprogrammablelatenciesallowthesamedevicetobeusefulforavarietyofhighbandwidthandhighper-formancememorysystemapplicati***)