三菱功放模块RA60H4047M1MITSUBISHIRFMOSFETMODULERA60H4047M1DESCRIPTIONTheRA60H4047M1isa60-wattRFMOSFETAmplifierModulefor12.5-voltmobileradiosthatoperateinthe400-to470-MHzrange.Thebatterycanbeconnecteddirectlytothedrainoftheenhancement-modeMOSFETtransistors.Withoutthegatevoltage(VGG=0V),onlya***allleakagecurrentflowsintothedrainandthenominaloutputsignal(Pout=60W)attenuatesupto60dB.Theoutputpowerandthedraincurrentincreaseasthegatevoltageincreases.Theoutputpowerandthedraincurrentincreasesubstantiallywiththegatevoltagearound0V(minimum).Thenominaloutputpowerbecomes***ailableatthestatethatVGGis4V(typical)and5V(maximum).AtVGG=5V,thetypicalgatecurrentsare5mA.Thismoduleisdesignedfornon-linearFMmodulation,butmayalsobeusedforlinearmodulationbysettingthedrainquiescentcurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpower.FEATURES•Enhancement-ModeMOSFETTransistors(IDD≅0@VDD=12.5V,VGG=0V)•Pout>60W,ηT>40%@VDD=12.5V,VGG=5V,Pin=50mW•BroadbandFrequencyRange:400-470MHz•Metalshieldstructurethatmakestheimprovementsofspuriousradiationsimple•Low-PowerControlCurrentIGG=5mA(typ)@VGG=5V•ModuleSize:67x18x9.9mm•Linearoperationispossiblebysettingthequiescentdraincurrentwiththegatevoltagesandcontrollingtheoutputpowerwiththeinputpower.RoHSCOMPLIANCE•RA60H4047M1isaRoHScompliantproduct.•RoHScomplianceisindicatebytheletter“G”aftertheLotMarking.•ThisproductincludetheleadintheGlassofelectronicpartsandtheleadinelectronicCeramicparts.However,itisapplicabletothefollowingexcepti***ofRoHSDirecti***.1.LeadintheGlassofacathode-raytube,electronicparts,andfluorescenttubes.2.LeadinelectronicCeramicparts.)