RA30H4047M射频功放模块SiliconRFPowerSemiconductorsRA30H4047MRoHSCompliance,400-470MHz30W12.5V,3StageAmp.ForMOBILERADIODESCRIPTIONTheRA30H4047Misa30-wattRFMOSFETAmplifierModulefor12.5-voltmobileradiosthatoperateinthe400-to470-MHzrange.Thebatterycanbeconnecteddirectlytothedrainoftheenhancement-modeMOSFETtransistors.Withoutthegatevoltage(VGG=0V),onlya***allleakagecurrentflowsintothedrainandtheRFinputsignalattenuatesupto60dB.Theoutputpoweranddraincurrentincreaseasthegatevoltageincreases.Withagatevoltagearound4V(minimum),outputpoweranddraincurrentincreasessubstantially.Thenominaloutputpowerbecomes***ailableat4.5V(typical)and5V(maximum).AtVGG=5V,thetypicalgatecurrentis1mA.Thismoduleisdesignedfornon-linearFMmodulation,butmayalsobeusedforlinearmodulationbysettingthedrainquiescentcurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpower.FEATURES•Enhancement-ModeMOSFETTransistors(IDD≅0@VDD=12.5V,VGG=0V)•Pout>30W,ηT>40%@VDD=12.5V,VGG=5V,Pin=50mW•BroadbandFrequencyRange:400-470MHz•Low-PowerControlCurrentIGG=1mA(typ)atVGG=5V•ModuleSize:66x21x9.88mm•LinearoperationispossiblebysettingthequiescentdraincurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpowerRoHSCOMPLIANCE•RA30H4047M-101isaRoHScompliantproducts.•RoHScomplianceisindicatebytheletter“G”aftertheLotMarking.•ThisproductincludetheleadintheGlassofelectronicpartsandtheleadinelectronicCeramicparts.However,itapplicabletothefollowingexcepti***ofRoHSDirecti***.1.LeadintheGlassofacathode-raytube,electronicparts,andfluorescenttubes.2.LeadinelectronicCeramicparts.ProductPhotos:)