RA13H4452M三菱射频功率放大模块DESCRIPTIONTheRA13H4452Misa13-wattRFMOSFETAmplifierModulefor12.5-voltmobileradiosthatoperateinthe440-to520-MHzrange.Thebatterycanbeconnecteddirectlytothedrainoftheenhancement-modeMOSFETtransistors.Withoutthegatevoltage(VGG=0V),onlya***allleakagecurrentflowsintothedrainandtheRFinputsignalattenuatesupto60dB.Theoutputpoweranddraincurrentincreaseasthegatevoltageincreases.Withagatevoltagearound4V(minimum),outputpoweranddraincurrentincreasessubstantially.Thenominaloutputpowerbecomes***ailableat4.5V(typical)and5V(maximum).AtVGG=5V,thetypicalgatecurrentis1mA.Thismoduleisdesignedfornon-linearFMmodulation,butmayalsobeusedforlinearmodulationbysettingthedrainquiescentcurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpower.FEATURES•Enhancement-ModeMOSFETTransistors(IDD@0@VDD=12.5V,VGG=0V)•Pout>13W,hT>40%@VDD=12.5V,VGG=5V,Pin=50mW•BroadbandFrequencyRange:440-520MHz•Low-PowerControlCurrentIGG=1mA(typ)atVGG=5V•ModuleSize:66x21x9.88mm•LinearoperationispossiblebysettingthequiescentdraincurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpowerProductPhotos:)