RA03M8894M射频功率放大模块DESCRIPTIONTheRA03M8894Misa3.6-wattRFMOSFETAmplifierModulefor7.2-voltportableradiosthatoperateinthe889-to941-MHzrange.Thebatterycanbeconnecteddirectlytothedrainoftheenhancement-modeMOSFETtransistors.Withoutthegatevoltage(VGG=0V),onlya***allleakagecurrentflowsintothedrainandtheRFinputsignalattenuatesupto60dB.Theoutputpoweranddraincurrentincreaseasthegatevoltageincreases.Withagatevoltagearound2.5V(minimum),outputpoweranddraincurrentincreasessubstantially.Thenominaloutputpowerbecomes***ailableat3V(typical)and3.5V(maximum).AtVGG=3.5V,thetypicalgatecurrentis1mA.Thismoduleisdesignedfornon-linearFMmodulation,butmayalsobeusedforlinearmodulationbysettingthedrainquiescentcurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpowerFEATURES•Enhancement-ModeMOSFETTransistors(IDD≅0@VDD=7.2V,VGG=0V)•Pout>3.6W@VDD=7.2V,VGG=3.5V,Pin=50mW•ηT>32%@Pout=3W(VGGcontrol),VDD=7.2V,Pin=50mW•BroadbandFrequencyRange:889-941MHz•Low-PowerControlCurrentIGG=1mA(typ)atVGG=3.5V•ModuleSize:30x10x5.4mm•LinearoperationispossiblebysettingthequiescentdraincurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpowerRoHSCOMPLIANT•RA03M8894M-101isaRoHScompliantproducts.•RoHScomplianceisindicatebytheletter“G”aftertheLotMarking.•ThisproductincludetheleadintheGlassofelectronicpartsandtheleadinelectronicCeramicparts.However,itapplicabletothefollowingexcepti***ofRoHSDirecti***.1.LeadintheGlassofacathode-raytube,electronicparts,andfluorescenttubes.2.LeadinelectronicCeramicparts.ProductPhotos:)