RA60H1317M1ASiliconRFPowerModulesDESCRIPTIONTheRA60H1317M1Aisa60-wattRFMOSFETAmplifierModulefor12.5-voltmobileradiosthatoperateinthe136-to174-MHzrange.Thebatterycanbeconnecteddirectlytothedrainoftheenhancement-modeMOSFETtransistors.Theoutputpoweranddraincurrentincreaseasthegatevoltageincreases.Withagatevoltagearound4V(minimum),outputpoweranddraincurrentincreasessubstantially.Thenominaloutputpowerbecomes***ailableat4.5V(typical)and5V(maximum).AtVGG=5V,thetypicalgatecurrentis1mA.Thismoduleisdesignedfornon-linearFMmodulation,butmayalsobeusedforlinearmodulationbysettingthedrainquiescentcurrentwiththegatevoltageandcontrollingtheoutputpowerwiththeinputpower.FEATURES•Enhancement-ModeMOSFETTransistors(IDD?0@VDD=12.5V,VGG=0V)•Pout>60W,?T>45%@VDD=12.5V,VGG=5V,Pin=50mW•BroadbandFrequencyRange:136-174MHz•Low-PowerControlCurrentIGG=1mA(typ)atVGG=5V•ModuleSize:67x19.4x9.9mmRoHSCOMPLIANCE•RA60H1317M1A-201isaRoHScompliantproduct.•RoHScomplianceisindicatebytheletter“G”aftertheLotMarking.•ThisproductincludetheleadintheGlassofelectronicpartsandtheleadinelectronicCeramicpartsHowever,itisapplicabletothefollowingexcepti***ofRoHSDirecti***.1.LeadintheGlassofacathode-raytube,electronicparts,andfluorescenttubes.2.LeadinelectronicCeramicparts.ProductPhoto：)