锗片Gewafern-typeandp-typeGewaferSemi-conductingGeSpecificati***GrowthMethodVGFDopantn-type:As;p-type:GaWaferShapeRound(DIA:2"4"6")SurfaceOrientation**(100)&plu***n;0.5°**OtherOrientati***maybe***ailableuponrequestDopantAs(n-type)Ga(p-type)Resistivity(Ω.cm)0.05-0.250.005-0.04EtchPitchDensity(cm2)≤300≤300WaferDiameter(mm)50.8&plu***n;0.3100&plu***n;0.3Thickness(µm)175&plu***n;25175&plu***n;25TTV[P/P](µm)≤15≤15WARP(µm)≤25≤25IF*(mm)17&plu***n;132.5&plu***n;1OF(mm)7&plu***n;118&plu***n;1Polish**E/E,P/E,P/GE/E,P/E,P/GBacksideRa(µm)***<0.1<0.1Note:OtherSpecificati***maybe***ailableuponrequest----------为了客户的紧急需求我司备有部分现货，请来电咨询----------另，提供红外用锗片，加工定制。可按客户要求，规格定制。)