哈尔滨特博科技有限公司***生产定制***化***单晶衬底片GaAswafer、多晶晶棒。尺寸2寸3寸4寸6寸晶向（100）（111）类型：N-type掺Si,P-type掺Zn,半绝缘Undope产品规格请参考下表ParameterGuaranteed/ActualValuesUOMGrowthMethod:VGFConductType:S-I-NDopant:UndopedDiameter:50.7&plu***n;0.1mmOrientation:(100)&plu***n;0.50OFlocation/length:EJ[0-1-1]&plu***n;0.50/16&plu***n;1IFlocation/length:EJ[0-11]&plu***n;0.50/7&plu***n;1Resistivity:Min:1.0E8Max:2.2E8Ω·cmMobility:Min:4500Max:5482cm2/v.sEPD:Min:700Max:800/cm2Thickness:350&plu***n;20µmEdgeRounding:0.25mmRLaserMarking:N/ATTV/TIR:Max:10µmBOW:Max:10µmWarp:Max:10µmParticalCount:＜50/wafer(forparticle>0.3um)SurfaceFinish–front:PolishedSurfaceFinish–back:EtchedEpi-Ready:Yes)