Specificati***:ItemGaN-FS-NDimensi***Ф50.8mm&plu***n;1mmThickness300&plu***n;25µmOrientationC-axis(0001)&plu***n;0.5°OrientationFlat(1-100)&plu***n;0.5°,16.0&plu***n;1.0mmSecondaryOrientationFlat(11-20)&plu***n;3°,8.0&plu***n;1.0mmTTV≤15µmBOW≤20µmConductionTypeN-typeResistivity(300K)<0.5Ω·cmDislocationDensityLessthan5x106cm-2UseableSurfaceArea>90%PolishingFrontSurface:Ra<0.2nm.Epi-readypolishedBackSurface:FinegroundPackagePackagedinaclass100cleanroomenvironment,insinglewafercontainers,underanitrogenatmosphere.ItemGaN-FS-10Dimensi***10.0mm×10.5mmThickness300&plu***n;25µmOrientationC-axis(0001)&plu***n;0.5°TTV≤15µmBOW≤20µmConductionTypeN-typeResistivity(300K)<0.5Ω·cmDislocationDensityLessthan5x106cm-2UseableSurfaceArea>90%PolishingFrontSurface:Ra<0.2nm.Epi-readypolishedBackSurface:Fineground)