***化***衬底晶片 北京特博万德科技有限公司
ItemUnitSepcificationRemarksCrystalGrowthVGFHBVBDopantSiorZnorundopeN-type/P-type/undopeDiameter1”2”3”4”6”Orientation(100)(111)Otherorientation***ailableCarrierConcentration/cm30.4~2.5*1018Otherspec.***ailableResisitivity(0.8-9)×10-3(1-9)×1017Otherspec.***ailableMobilitycm2/v.s1500~30003000~5000Otherspec.***ailableEPD/cm2<100<500<><5000<10000<>Otherspec.***ailableThickness~350um~625umOtherspec.***ailableTTVum<10umorbetterTIRum<10umorbetterBowum<10umorbetterWarpum<10umorbetterSurfacePEPPEpi-readyYes)