单晶掺杂导电类型载流子浓度cm-3位错密度cm-2生长方法***大尺寸标准基片GaSbNoneNonehighRZnTeTehighRPP-P+NN1~2×10171~5×10161~5×10182~6×10171~5×1016＜103LECΦ3″Φ3″×0.5Φ2″×0.5TypicalElectricalPropertiesDopant***ailableTeZnUndopedTypeofconductivityNPPConcentration(cm-3)1E17-5E182E17-4E18xHallMobility(cm2/v.s.)2500-3500200-500600-700StandardSpecificati***GrowthmethodLECDiameter(mm)50.8Thickness(um)500+/-25umConductivitySemi-conductingOrientation<100>,<111>,<110>OfforientationFrom2°to10°offFlatopti***EJorUSSEMI.Std.SurfacefinishOnesideortwosidespolishedEPD(cm-2)<1000or<10000GradeEpipolishedgrade,mechanicalgradePackagemethodSinglewafercontainerwithouterfoilbag)