GaPwafersforLPEConductivityTypen-typep-typeGrowthmethod/DopantLEC/SLEC/SiLEC/ZnCarrierconcentration(cm-3)*(1>÷20)x1017(1÷10)x1018Resistivity(Ωxcm)0,250÷0,1000,04÷0,02Mobility(cm2/Vxsec)150÷101≥40EPD***erage(cm-2)≤1x105Diameter(mm)**50.8&plu***n;0.2Standardthickness**(*m)290&plu***n;10Orientation**(111)Surfacequalityfrontside-ascutbackside-ascutBow<10TTV<10GaPwafersforMOCVDConductivityTypen-typeGrowthmethod/DopantLEC/SCarrierconcentration(cm-3)(5÷20)x1017Resistivity(Ωxcm)0.10÷0.04Mobility(cm2/Vxsec)≥50EPD***erage(cm-2)≤1x105Diameter(mm)*50.8&plu***n;0.276.2&plu***n;0.2Standardthickness*(*m)300&plu***n;20350&plu***n;20Orientation*(100)***Surfacequalityfrontside-epi-readybackside-ascut/polishedBow<10<15TTV<7<15GaPwafersforopticsConductivityTypen-typeGrowthmethod/DopantLEC/undopedCarrierconcentration(cm-3)<2x1016Mobility(cm2/Vxsec)≥180EPD***erage(cm-2)≤2x105Absorptioncoefficient(cm-1)1.93(D=580nm)Diameter(mm)*50.8&plu***n;0.276.2&plu***n;0.2Standardthickness*(*m)≥300≥500Orientation(100)/(111)Surfacequalityfrontside-opticallypolished/ascutbackside-opticallypolished/ascutSemi-insulatingGaPwafersConductivityTypei-typeGrowthmethod/DopantLEC/Cr/Ni/MnResistivity(Ωxcm)≥106EPD***erage(cm-2)≤2x105Diameter(mm)50.8&plu***n;0.276.2&plu***n;0.2Standardthickness*(*m)300&plu***n;20350&plu***n;20Orientation(100)/(111)Mis-orientation0-10ºtowardanyplaneuponrequest0-5ºtowardanyplaneuponrequestSurfacequalityfrontside-epi-readybackside-ascut/polishedBow<10<15TTV<10<15)