我公司***销售美国离子束刻蚀系统IBE，产品性价比高。ComputerControlledClass100IonBeamEtchSystemforupto6”Wafer--PCcontrolledwithLabViewSoftware,recipedriven,pressure,fullyinterlocked,capableofrunningautomaticallyandrecoveringsafelyfrompowerinterruption.--PasswordprotectedthreelevelsofAuthorization--Chamber:14”StainlessSteelcube,and8”frontdoorwith5”window--SubstratePlaten:Upto6”substrates,twoindependentaxisofrotationplatenaxis(0-90)steppermotordriven,waferaxis(0-10RPM)HVACsteppermotordriven,watercooled--WaferLoadUnload:Manual,fromthefrontdoor--IonGun:16cmbeamdiameter,1200eV,650mAiongun,withneutralizerandapneumaticshutter--Vacuum:BasePressure8x10-8Torr,1240l/secPfeifferHipace1200TurbowithISP-500CDryScrollpump,--Gauges:BOCEdwa***widerangegauge,BaratronGauge--FlowControl:50sccmMKSArMFC--PressureControl:TurboSpeedControl--ChamberVent:N2Slowventwithturbospeedmonitor--ChamberPumpDown:PCControlled,safetyinterlocked--Cabinet:26”x26”x44”StainlessSteel--Utilities:415VAC,20A/Phase,50/60Hz,ChilledWater4G/minat40Psi,60)