DESCRIPTIONRD06HVF1isaMOSFETtypetransistorspecificallydesignedforHFRFpoweramplifiersapplicati***.FEATURESHighpowergain:Pout>6W,Gp>13dB@Vdd=12.5V,f=175MHzAPPLICATIONForoutputstageofhighpoweramplifiersinVHF/UHFBandmobileradiosets.供应MITSUBISH射频管RD06HVF1原装***大量库存以上信息来自深圳市润百信科技有限公司)