GeneralDescriptionMEM2307XGSeriesP-channelenhancementmodefield-effecttransistor,producedwithhighcelldensityDMOStrenchtechnology,whichisespeciallyusedtominimizeon-stateresistance.Thisdeviceparticularlysuitslowvoltageapplicati***,andlowpowerdissipation,andlowpowerdissipationinavery***alloutlinesurfacemountpackage.Features-30V/-4.1A***(ON)＜88m&Ugr***e;@VGS=-10V,ID=-4.1A***(ON)＜108m&Ugr***e;@VGS=-4.5V,ID=-3AHighDensityCellDesignForUltraLowOn-ResistanceSubminiaturesurfacemountpackage:SOT23TypicalApplicationPowermanagementLoadswitchBatteryprotection)