GeneralDescriptionMEM2301XGSeriesP-channelenhancementmodefield-effecttransistor,producedwithhighcelldensityDMOStrenchtechnology,whichisespeciallyusedtominimizeon-stateresistance.Thisdeviceparticularlysuitslowvoltageapplicati***,andlowpowerdissipation,andlowpowerdissipationinavery***alloutlinesurfacemountpackage.Features-20V/-2.8A***(ON)=93mΩ@VGS=-4.5V,ID=-2.8A***(ON)=113mΩ@VGS=-2.5V,ID=-2AHighDensityCellDesignForUltraLowOn-ResistanceSubminiaturesurfacemountpackage:SOT23TypicalApplicationPowermanagementLoadswitchBatteryprotection)