RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFETDesignedforCDMAbasestationapplicati***withfrequenciesfrom920to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats.•TypicalSingle-CarrierW-CDMAPerformance:VDD=28Volts,IDQ=1400mA,Pout=58Watts***g.,IQMagnitudeClipping,ChannelBandwidth=3.84MHz,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDFCapableofHandling10:1VSWR,@32Vdc,940MHz,200WattsCWOutputPower(3dBInputOverdrivefromRatedPout),DesignedforEnhancedRuggedness•TypicalPout@1dBCompressionPoint200WattsCWFeatures•100%PARTestedforGuaranteedOutputPowerCapability•CharacterizedwithSeriesEquivalentLarge-SignalImpedanceParametersandCommonSourceS-Parameters•InternallyMatchedforEaseofUse•IntegratedESDProtection•GreaterNegativeGate-SourceVoltageRangeforImprovedClassCOperation•225°CCapablePlasticPackage•DesignedforDigitalPredistortionErrorCorrectionSystems•OptimizedforDohertyApplicati***•RoHSCompliant•InTapeandReel.R3Suffix=250Unitsper32mm,13inchRee)