江苏长电科技股份有限公司MOSFET系列型号类型PDIDVBR(DSS)***(on)(max)VGS(th)gfs(min)印记封装形式Circuit(W)(A)(V)(Ω)IDVGS(V)ID(μA)(S)VDSIDG(A)(V)(V)(A)DiagramCJB01N65BN-chMOS21650140.6102~4250---TO-263-2LCircuit60CJB02N65N-chMOS226504.41102~4250---TO-263-2LCircuit60CJB04N60AN-chMOS2460032102~42502.5502TO-263-2LCircuit60CJB04N65N-chMOS2465032102~4250---TO-263-2LCircuit60CJB04N65AN-chMOS2465032102~4250---TO-263-2LCircuit60CJB10N60N-chMOS21060015102~4250---TO-263-2LCircuit60CJD01N60N-chMOS11600100.6102~42500.5500.5TO-251-3L(4R)Circuit60CJD01N65BN-chMOS1.251650140.6102~4250---TO-251-3LCircuit60CJD02N60N-chMOS1.2526004.41102~42501501TO-251-3LCircuit60CJD02N65N-chMOS1.2526504.41102~4250---TO-251-3LCircuit60CJD04N60AN-chMOS1.25460032102~42502.5502TO-251-3LCircuit60CJD04N65N-chMOS1.25465032102~4250---TO-251-3LCircuit60CJD04N65AN-chMOS1.25465032102~4250---TO-251-3LCircuit60CJP01N65BN-chMOS21650140.6102~4250---TO-220-3LCircuit60CJP02N60N-chMOS226004.41102~42501501TO-220-3LCircuit60CJP02N65N-chMOS226504.41102~4250---)