温补压控晶振VCTCXO 10MHz-2.5ppm
温补压控晶振VCTCXO10MHz-2.5ppmVCTCXO10.000000MHzSPECIFICATIONØElectricalPerformanceItem1-1ParameterNominalFrequencyStorageTemperatureOperableTemperatureFrequency1-4-1StabilityvsTemperatureNominal1-4-2FrequencyToleranceNominal1-4-3FrequencyTolerance1-51-5-11-61-71-7-11-81-8-11-91-10SupplyVoltageSupplyvoltagestabilitySupplyCurrentLoadLoadsensitivityOutputPeaktopeakStarttimeAgingperyear-12.85-0.33.15+0.3+310Kohm//10pF-0.2Clippedsine0.82+1Vp-pmsppm@25±2oC+0.2ppm@Load±10%VppmmA@Vcc=3±5%@Vcc=3V-2.0+2.0ppm-0.5+0.5ppm-2.5+2.5ppm-40Min.Typ.Max.UnitsMHzoTestCondition10.0000001-2+85C1-3-40+85oCFrom-40to85oCRef25oC,Vcc=3V,Vc=1.5VVcc=3V,Vc=1.5V@25±2oC,BeforeIRVcc=3V,Vc=1.5V@25±2oC,afterIRreflow2hrsPage1VCTCXO10.000000MHzSPECIFICATION1-11-11-11-21-11-31-12ØVcrangePullingrange(-)Pullingrange(+)Phasenoise+5-1350.51.52.5-5VppmppmdBc@Vc=0.5V@Vc=2.5V@1KHzSpecificationofReliabilityEnvironmentalGrossLeakTestConditionIPA4kgf/cmfor4hrsthentwopartsairratetocompareThermalShock-55oCto+125oC,socktime10minstotal200cyclesIRReflow30~200oC/180sec,peaktemp.260±10oC/10sec,twiceHighTemp.Storage85oC,500hrsReferenceStd.MIL-STD-883E1014.9ConditionAMIL-STD-883E1011.9ConditionBMIL-STD-202G210ConditionBMIL-STD-202G108ConditionCHighTemp.&HumidityStorageLowTemp.Storage-40±3oC,500hrs85oC,85%RH,500hrsJIS-C7022B-5ConditionCJIS-C5021MechanicalMechanicalShockVibrationTestCondition1500g,half-sine,0.5ms;eachdirectionfor3timesinX,Y,Z10~2000Hz,20g,1.52mm;eachdirectionfor4hrsinX,Y,ZReferenceStd.MIL-STD-883E2002.3ConditionBMIL-STD-883E2007.2ConditionAPage2VCTCXO10.000000MHzSPECIFICATIONnTESTCIRCUITnOUTPUTWAVEFORMPage3VCTCXO10.000000MHzSPECIFICATIONnPRODUCTDIMENSIONSØDIMENSIONSUnit:mmØPINFUNCTIONSPage4温补压控晶振VCTCXO10MHz-2.5ppm)
深圳市瑞科创电子有限公司
业务 QQ: 2355401194