TO-252-2LPlastic-EncapsulateTransistorsMJD31CTRANSISTOR(NPN)FEATURESzDesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplicati***.zLeadFormedforSurfaceMountApplicati***inPlasticSleeves(NoSuffix)zStraightLeadVersioninPlasticSleeves(“–1”Suffix)zLeadFormedVersionin16mmTapeandReel(“T4”Suffix)zElectricallySimilartoPopularTIP31andTIP32SeriesMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)SymbolParameterMaxUnitVCBOCollector-BaseVoltage100VVCEOCollector-EmitterVoltage100VVEBOEmitter-BaseVoltage5VICCollectorCurrent-Continuous3APCCollectorPowerDissipation1.25WTJJunctionTemperature150℃TstgStorageTemperature-65-150℃ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditi***MinMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=1mA,IE=0100VCollector-emitterbreakdownvoltage*VCEO(sus)IC=30mA,IB=0100VEmitter-basebreakdownvoltageV(BR)EBOIE=1mA,IC=05VCollectorcut-offcurrentICESVCE=100V,VEB=020μACollectorcut-offcurrentICEOVCE=60V,IB=050μAEmittercut-offcurrentIEBOVEB=5V,IC=01mAhFE(1)VCE=4V,IC=1A25DCcurrentgainhFE(2)VCE=4V,IC=3A1575Collector-emittersaturationvoltageVCE(sat)IC=3A,IB=0.375A1.2VBase-emittervoltageVBE(on)VCE=4V,IC=3A1.8VTransitionfrequencyfTVCE=10V,IC=0.5A,fT=1KHz3M)