Features7A,600V,***(on)(Max1.2)@VGS=10VUltra-lowGateCharge(Typical29nC)FastSwitchingCapability100%***alancheTestedIsolationVoltage(VISO=4000VAC)MaximumJunctionTemperatureRange(150℃)GeneralDescriptionThisPowerMOSFETisproducedusingWinsemi'sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,h***eahighrugged***alanchecharacteristics.Thisdevicesisspeciallywellsuitedforhalfbridgeandfullbridgeresonanttopologylineaelectroniclampballast,highefficiencyswitchedmodepowersupplies,activepowerfactorcorrection.ParametersSymbolParameterValueUnitsVDSSDrainSourceVoltage600VIDContinuousDrainCurrent(@Tc=25℃)7AContinuousDrainCurrent(@Tc=100℃)4.1AIDMDrainCurrentPulsed(Note1)26AVGSGatetoSourceVoltage&plu***n;30VEASSinglePulsed***alancheEnergy(Note2)240mJEARRepetitive***alancheEnergy(Note1)15mJdv/dtPeakDiodeRecoverydv/dt(Note3)4.5V/nsPDTotalPowerDissipation(@Tc=25℃)142WDeratingFactorabove25℃1.14W/℃TJ,TstgJunctionandStorageTemperature-55~150℃TLChannelTemperature300℃我司常备原装现货，质量保证，价格优势，欢迎咨询洽谈！！================================================深圳市信泰瑞达科技有限公司/廖立斌ADD：深圳市福田区华强北振兴路华发大厦5楼商务中心#香港观塘骏业街46号航空大厦1008室电话：0755-83242658传真：0755-83015686手机:13641469108***:543158798519794981MSN:xintairuida@E-mail:xintairuida@)