品牌华晶型号CS10N60A8HD种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压20（V）***大漏极电流10A（mA）***大耗散功率125（mW）GeneralDescription：VDSS600VID10APD(TC=25℃)125W***(ON)0.63ΩCS10N60A8HD,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:60nC)zLowReversetransfercapacitances(Typical:28pF)z100%SinglePulse***alancheenergyTest)