品牌华晶型号CS460ANH种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途HI-REL/高可靠性封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压500（V）夹断电压30（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流20000（mA）***大耗散功率230（mW）GeneralDescription：VDSS=500VID=20APD(TC=25℃)=230W***(ON)=0.26ΩTO–3P(N)CS460ANH,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-3P(N),whichacco***withtheRoHSstandard..Features：zFastSwitchingzLowONResistance(***on≤0.3Ω)zLowGateCharge(TypicalData:130nC)zLowReversetransfercapacitances(Typical:65pF)z100%SinglePulse***alancheenergyTest)