品牌华晶型号CS7N60FA9HD种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压30（V）***大漏极电流7A（mA）***大耗散功率34（mW）GeneralDescription：VDSS600VID7APD(TC=25℃)30W***(ON)1.10ΩCS7N60FA9HD,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220F,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:21nC)zLowReversetransfercapacitances(Typical:15pF)z100%SinglePulse***alancheenergyTest)