品牌华晶型号CSZ44V种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途MIN/微型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压60（V）夹断电压20（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流55000（mA）***大耗散功率130（mW）GeneralDescription：VDSS=60VID=55APD(TC=25℃)=130W***(ON)=0.018ΩCSZ44V,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤18mΩ)zLowGateCharge(TypicalData:33.3nC)zLowReversetransfercapacitances(Typical:115pF)z100%SinglePulse***alancheenergyTest)