品牌华晶型号CS4N60A8HD种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压20（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流4A（mA）***大耗散功率75（mW）GeneralDescription：VDSS600VID4APD(TC=25℃)75W***(ON)1.9ΩCS4N60A8HD,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:18nC)zLowReversetransfercapacitances(Typical:14pF)z100%SinglePulse***alancheenergyTest)