品牌华晶型号CS13N50A8H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压500（V）夹断电压30（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流13A（mA）***大耗散功率180（mW）GeneralDescription：VDSS500VID13APD(TC=25℃)150W***(ON)0.35ΩCS13N50A8H,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤0.45Ω)zLowGateCharge(TypicalData:85nC)zLowReversetransfercapacitances(Typical:100pF)z100%SinglePulse***alancheenergyTest)