品牌华晶型号CS640A8H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途MIX/混频封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压200（V）夹断电压150（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流18A（mA）***大耗散功率125（mW）GeneralDescription：VDSS=200VID=18APD(TC=25℃)=110W***(ON)=0.18ΩIRF640thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤0.20Ω)zLowGateCharge(Typical:40nC)zLowReversetransfercapacitances(Typical:80pF)z100%SinglePulse***alancheenergyTest)