品牌华晶型号CS8N60A8H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压30（V）***大漏极电流8A（mA）***大耗散功率110（mW）GeneralDescription：VDSS600VID8APD(TC=25℃)110W***(ON)0.90ΩCS8N60A8H,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤1.25Ω)zLowGateCharge(TypicalData:21nC)zLowReversetransfercapacitances(Typical:15pF)z100%SinglePulse***alancheenergyTest)