品牌华晶型号CS20N60ANH种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道注：此处单价只因网站填写需要，不作为成交依据，产品价格会随市场变化而变化，产品资料会随产品更新而更新，如需***新报价及***新产品资料请来电咨询，***华晶原厂***，质量与***的保证。GeneralDescription：CS20N60ANH,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-3P(N),whichacco***withtheRoHSstandard..VDSS600VID20APD(TC=25℃)250W***(ON)0.30ΩTO–3P(N)Features：zFastSwitchingzLowONResistance(***on≤0.45Ω)zLowGateCharge(TypicalData:70nC)zLowReversetransfercapacitances(Typical:32pF)z100%SinglePulse***alancheenergyTest)