品牌华晶型号CS9N90ANHD种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途L/功率放大封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压900（V）夹断电压1（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流9000（mA）***大耗散功率150000（mW）GeneralDescription：VDSS=900VID=9APD(TC=25℃)=150W***(ON)=1.3ΩCS9N90ANHD,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-3PN,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:65nC)zLowReversetransfercapacitances(Typical:13pF)z100%SinglePulse***alancheenergyTest)