品牌华晶型号CS90N03B4种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途DC/直流封装外形P-DIT/塑料双列直插材料N-FET硅N沟道开启电压25（V）夹断电压20（V）跨导0.1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流90A（mA）***大耗散功率80（mW）CS90N03B4,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-252,whichacco***withtheRoHSstandard.Features：?TrenchFETPowerMOSFET?LowONResistance(***on≤8mΩ)?LowGateCharge(TypicalData:17nC)VDSS25VID80APD(TC=25℃)80W***(ON)6.8mΩ?LowReversetransfercapacitances(Typical:70pF)?100%SinglePulse***alancheenergyTest)