品牌华晶型号CS1N80A1H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形P-DIT/塑料双列直插材料N-FET硅N沟道开启电压800（V）夹断电压1（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流1A（mA）***大耗散功率3（mW）ID=1AVDSS=800VCS1N80A1H,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-92,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤15Ω)zLowGateCharge(TypicalData:5.0nC)zLowReversetransfercapacitances(Typical:2.7pF)z100%SinglePulse***alancheenergyTest800V系列产品主要应用领域：小功率充电器（1A），PC电源（8A）)