品牌华晶型号214BA3HD种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途TUN/调谐封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压250（V）夹断电压20（V）跨导10（μS）极间电容10（pF）低频噪声系数1（dB）***大漏极电流3（mA）***大耗散功率30（mW）GeneralDescription：VDSS=250VID=3.0APD(TC=25℃)=30W***(ON)=1.0ΩIRFU214BA3HD,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-251,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:8.0nC)zLowReversetransfercapacitances(Typical:8pF)z100%SinglePulse***alancheenergyTest)