品牌华晶型号CS100N03A8H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形P-DIT/塑料双列直插材料N-FET硅N沟道开启电压25（V）夹断电压1（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流100A（mA）***大耗散功率1（mW）GeneralDescription：CS100N03A8HVDSS25VID100APD(TC=25℃)80W***(ON)6.8mΩthesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zTrenchFETPowerMOSFETzLowONResistance(***on≤8mΩ)zLowGateCharge(TypicalData:17nC)zLowReversetransfercapacitances(Typical:70pF)z100%SinglePulse***alancheenergyTest)