品牌华晶型号CS630A8H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型用途L/功率放大封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压200（V）夹断电压150（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流9A（mA）***大耗散功率75（mW）GeneralDescription：VDSS=200VID=9APD(TC=25℃)=75W***(ON)=0.35ΩCS630,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤0.4Ω)zLowGateCharge(TypicalData:31nC)zLowReversetransfercapacitances(Typical:35pF)z100%SinglePulse***alancheenergyTest)