品牌华晶型号CS2N10A23种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压100（V）夹断电压1（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流1500（mA）***大耗散功率3.1（mW）GeneralDescription：VDSS100VID1.5APD(TC=25℃)3.1W***(ON)(Max)0.54ΩCS2N10A23,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisSOT-223,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowGateCharge(TypicalData:7nC)zLowReversetransfercapacitances(Typical:25pF)z100%SinglePulse***alancheenergyTest)