品牌华晶型号25N06B4种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形P-DIT/塑料双列直插材料N-FET硅N沟道开启电压100（V）夹断电压20（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流800（mA）***大耗散功率3000（mW）GeneralDescription：VDSS60VID25APD(TC=25℃)50W***(ON)Typ28mΩCS75N75B8H,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤11.5mΩ)zLowGateCharge(TypicalData:71nC)zLowReversetransfercapacitances(Typical:40pF)z100%SinglePulse***alancheenergyTest)