品牌华晶型号CS1N60C1H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压30（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流1000（mA）***大耗散功率3（mW）GeneralDescription：VDSS600VID1APD(TC=25℃)3W***(ON)9ΩCS1N60C1H,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-92,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤15Ω)zLowGateCharge(TypicalData:5.0nC)zLowReversetransfercapacitances(Typical:2.7pF)z100%SinglePulse***alancheenergyTest)