品牌华晶型号CS1N60C1HD种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压30（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流1500（mA）***大耗散功率3（mW）GeneralDescription：VDSS600VID1.5APD(TC=25℃)3W***(ON)7ΩGeneralDescription：CS1N60C1HD,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-92,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:7.5nC)zLowReversetransfercapacitances(Typical:5.0pF)z100%SinglePulse***alancheenergyTest)