品牌华晶型号CS8N90A8H种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压900（V）夹断电压30（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流8000（mA）***大耗散功率3（mW）注：此处单价不作为成交单价！GeneralDescription：VDSS900VID8APD(TC=25℃)130W***(ON)Typ1.2ΩCS8N90A8,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-220AB,whichacco***withtheRoHSstandard.Features：zFastSwitchingzLowONResistance(***on≤1.5Ω)zLowGateCharge(TypicalData:49nC)zLowReversetransfercapacitances(Typical:12pF)z100%SinglePulse***alancheenergyTest)