品牌华晶型号BT15N120种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料IGBT绝缘栅比极开启电压1200（V）夹断电压3（V）跨导1（μS）极间电容1（pF）低频噪声系数1（dB）***大漏极电流15A（mA）***大耗散功率186（mW）GeneralDescription：VCES1200VIC15APD186WVCE(SAT)3.0VUsingHuaJing’sproprietaryplanardesignandadvancedNPTtechnology,the1200VNPTIGBTofferssuperiorconductionandswitchingperformance,high***alancheruggednessandeasyparalleloperation.Features：●NPTPlanartechnology,Positivetemperaturecoefficient.●Lowsaturationvoltage:Vce(sat),typ=2.6V@Ic=15A,Vce=15V●Extremelyenhanced***alanchecapability)