品牌华晶型号CS2N60B3D种类绝缘栅(MOSFET)沟道类型N沟道导电方式耗尽型封装外形***D(SO)/表面封装材料N-FET硅N沟道开启电压600（V）夹断电压30（V）***大漏极电流2A（mA）***大耗散功率35（mW）注：此网络单价只因填写需要，实际单价以来电咨询为准。GeneralDescription：VDSS600VID1.5APD(TC=25℃)30W***(ON)Typ7.0ΩCS2N60B3D,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancethe***alancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturizationandhigherefficiency.ThepackageformisTO-251,whichacco***withtheRoHSstandard.Features：zFastSwitchingzESDImprovedCapabilityzLowGateCharge(TypicalData:7.5nC)zLowReversetransfercapacitances(Typical:5.0pF)z100%SinglePulse***alancheenergyTest)