氮化***厚膜晶片2”GaNTemplates性能参数Specificati***:产品型号ItemGaN-T-NGaN-T-S尺寸Dimensi***Ф2”厚度Thickness15µm,20µm,30µm,40µm30µm,90µm晶体取向OrientationC-axis(0001)&plu***n;1°导电类型ConductionTypeN-typeSemi-Insulating电阻率Resistivity(300K)<0.05Ω·cm﹥106Ω·cm位错密度DislocationDensityLessthan1x108cm-2衬底结构SubstratestructureThickGaNonSapphire(0001)有效面积UseableSurfaceArea>90%抛光PolishingStandard:SSPOption:DSP包装PackagePackagedinaclass100cleanroomenvironment,incassettesof25pcsorsinglewafercontainers,underanitrogenatmosphere.2英寸氮化***自支撑晶片2”Free-StandingGaNSubstrates性能参数Specificati***:产品型号ItemGaN-FS-NGaN-FS-SI尺寸Dimensi***Ф50.8mm&plu***n;1mm厚度Thickness300&plu***n;25µm晶体取向OrientationC-axis(0001)&plu***n;0.5°主***边OrientationFlat(1-100)&plu***n;0.5°,16.0&plu***n;1.0mm次***边SecondaryOrientationFlat(11-20)&plu***n;3°,8.0&plu***n;1.0mmTTV(TotalThicknessVariation)≤15µm弯曲度BOW≤20µm导电类型ConductionTypeN-typeSemi-Insulating电阻率Resistivity(300K)<0.5Ω·cm>106Ω·cm位错密度DislocationDensityLessthan5x106cm-2有效面积UseableSurfaceArea>90%抛光PolishingFrontSurface:Ra<0.2nm.Epi-readypolishedBackSurface:Fineground包装PackagePackagedinaclass100cleanroomenvironment,insinglewafercontainers,underanitrogenatmosphere.定制尺寸氮化***自支撑晶片Free-standingGaNSubstrates(Customizedsize)性能参数Specificati***:产品型号ItemGaN-FS-10GaN-FS-15尺寸Dimensi***10.0mm×10.5mm14.0mm×15.0mm厚度ThicknessRank300300&plu***n;25µmRank350350&plu***n;25µmRank400400&plu***n;25µm晶体取向OrientationC-axis(0001)&plu***n;0.5°TTV(TotalThicknessVariation)≤15µm弯曲度BOW≤20µm导电类型ConductionTypeN-typeSemi-Insulating电阻率Resistivity(300K)<0.5Ω·cm>106Ω·cm位错密度DislocationDensityLessthan5x106cm-2有效面积UseableSurfaceArea>90%抛光PolishingFrontSurface:Ra<0.2nm.Epi-readypolishedBackSurface:Fineground包装PackagePackagedinaclass100cleanroomenvironment,insinglewafercontainers,underanitrogenatmosphere.*5.0mm*5.5mmis***ailableandothersizecanbecustomized.性能参数Specificati***:产品型号ItemGaN-FS-N-1.5尺寸Dimensi***Ф25.4mm&plu***n;0.5mmФ38.1mm&plu***n;0.5mmФ40.0mm&plu***n;0.5mmФ45.0mm&plu***n;0.5mm厚度Thickness300&plu***n;25µm晶体取向OrientationC-axis(0001)&plu***n;0.5°主***边OrientationFlat(1-100)&plu***n;0.5°8&plu***n;1mm(1-100)&plu***n;0.5°12&plu***n;1mm(1-100)&plu***n;0.5°14&plu***n;1mm(1-100)&plu***n;0.5°14&plu***n;1mm次***边SecondaryOrientationFlat(11-20)&plu***n;3°4&plu***n;1mm(11-20)&plu***n;3°6&plu***n;1mm(11-20)&plu***n;3°7&plu***n;1mm(11-20)&plu***n;3°7&plu***n;1mmTTV(TotalThicknessVariation)≤15µm弯曲度BOW≤20µm导电类型ConductionTypeN-typeSemi-Insulating<tdstyle="width:35.42%;height:)