TK10A60D晶体管/功率MOSFET/Nch500V<VDSS≦700V属性值条件部件型号TK10A60D极性N沟漏源电压VDSS600V漏电流ID10A漏功耗PD45W门电荷总数Qg(nC)(标准)25漏源导通电阻RDS(ON)(***大)@VGS=10V0.75Ω封装TO-220SIS管脚数3表面安装型N产品分类功率MOSFET(N沟500V<VDSS≦700V)装配基础China,Malaysia,JapanRoHSCompatibleProduct(s)(#)***ailable)