氧化铝石英坩埚生产用超纯水处理设备，微电子(单晶硅、多晶硅、太阳能电池、氧化铝坩埚)生产用高纯水系统超纯水设备，余艳13073396006,***:674831270微电子、电池工业用水处理设备PurewaterforMicro-electronics,batteriesindustrial应用领域和指标要求参考Referenceofapplicati***areasandindexesrequired用途Applicati***用水指标WaterIndicators参考标准Referencestandard单晶硅、多晶硅、太阳能电池、氧化铝坩埚、光伏玻璃等生产Monocrystallinesilicon,polycrystallinesilicon,solarcells,aluminacrucible,photovoltaicglass,andotherproduction电阻率15~18.25MΩ.CMResitivity15~18.25MΩ.CM我国电子级水质技术指标，GB11446-1-1997ThewaterqualityofChina'selectronic-gradetechnicalindicatorsGB11446-1-1997美国半导体工业用纯水指标TheindustrialpurewaterindicatorsofU.S.semiconductor单晶硅半导体集成电路块，显像管、玻壳、液晶显示器等制造工业Monocrystallinesiliconsemiconductorchips,tubes,glass,liquidcrystaldisplaysandothermanufacturingindustries电阻率15~18.25MΩ.CMResitivity15~18.25MΩ.CM美国半导体工业用纯水指标TheindustrialpurewaterindicatorsofU.S.semiconductor我国电子级水质技术指标，GB11446-1-1997Chineseelectronic-gradewaterqualitytechnicalspecificati***GB11446-1-1997光学材料清洗用水、电子陶瓷行业用纯水、***磁性材料用纯水Purewaterforopticalmaterials,electronicceramicsandcutting-edgemagneticmaterials电阻率10~17MΩ.CMResitivity10~17MΩ.CM我国电子级水质技术指标，GB11446-1-1997Chineseelectronic-gradewaterqualitytechnicalspecificati***GB11446-1-1997美国半导体工业用纯水指标TheindustrialpurewaterindicatorsofU.S.semiconductor蓄电池、锂电池、锌锰电池生产Batteries,lithiumbatteries,zinc-manganesebatteryproduction电阻率5~10MΩ.CMResitivity5~10MΩ.CM我国电子级水质技术指标，GB11446-1-1997Chineseelectronic-gradewaterqualitytechnicalspecificati***GB11446-1-1997有色金属、***冶炼用水、纳米级新材料生产用水、航空新材料生产用水、ITO导电玻璃制造用水、电子级无尘布生产用水Purewaterfornon-ferrousmetals,preciousmetals***elting,nano-scaleproductionofnewmaterials,***iationandproductionofnewmaterials,ITOconductiveglass,productionofelectronic-gradefordust-freecloth电阻率15~18.25MΩ.CMResitivity15~18.25MΩ.CM我国电子级水质技术指标，GB11446-1-1997Chineseelectronic-gradewaterqualitytechnicalspecificati***GB11446-1-1997美国半导体工业用纯水指标TheindustrialpurewaterindicatorsofU.S.semiconductor主要工艺流程和出水指标：Maintechnicalprocessandstandardofoutputwater※预处理+反渗透+离子交换器（电阻率≥15MΩ.CM）Pre-treatment+stagereverseo***osissystem+ionexchange(electricconductivity≥15MΩ.CM）※预处理+二级反渗透+EDI（电阻率≥15MΩ.CM）Pre-treatment+stagereverseo***osissystem+EDI(electricconductivity≥15MΩ.CM）※预处理+二级反渗透+脱气膜+EDI+抛光混床（电阻率≥18.25MΩ.CM）Pre-treatment+doublestagereverseo***osissystem+airfilm+EDI+polishingmixedbed(electricconductivity≥18.25MΩ.CM）详情请联系：余艳13073396006,***:674831270）详细工艺需根据原水设计情况进行设计Detailsofthedesignprocessshouldbecarriedoutaccordingtothefeedwaterquality.纯水设备的主要特点Maintechnicsofpurewatertreatmentequipment)